Tailoring SnO 2 Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application in Batteries.
Reynald PonteErwan RauwelProtima RauwelPublished in: Materials (Basel, Switzerland) (2023)
Tin oxide (SnO 2 ) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that varies as a function of its polymorph, i.e., rutile, cubic or orthorhombic. In this review, we survey the crystal and electronic structures, bandgap and defect states of SnO 2 . Subsequently, the significance of the defect states on the optical properties of SnO 2 is overviewed. Furthermore, we examine the influence of growth methods on the morphology and phase stabilization of SnO 2 for both thin-film deposition and nanoparticle synthesis. In general, thin-film growth techniques allow the stabilization of high-pressure SnO 2 phases via substrate-induced strain or doping. On the other hand, sol-gel synthesis allows precipitating rutile-SnO 2 nanostructures with high specific surfaces. These nanostructures display interesting electrochemical properties that are systematically examined in terms of their applicability to Li-ion battery anodes. Finally, the outlook provides the perspectives of SnO 2 as a candidate material for Li-ion batteries, while addressing its sustainability.