Highly Electron-Doped TaON Single-Crystal Growth by a High-Pressure Flux Method.
Kohdai IshidaCédric TasselDaichi KatoHiroki UbukataKantaro MurayamaTaito MurakamiMasatomo YashimaYuji HigoYoshinori TangeW Adam PhelanTyrel M McQueenHongcheng LuPublished in: Inorganic chemistry (2022)
Transition-metal oxynitrides have a variety of functions such as visible light-responsive catalysts and dielectric materials, but acquiring single crystals necessary to understand inherent properties is difficult and is limited to relatively small sizes (<10 μm) because they easily decompose at high temperatures. Here, we have succeeded in growing platelet single crystals of TaON with a typical size of 50 × 100 × 10 μm 3 under a high pressure and high temperature (6 GPa and 1400 °C) using a LiCl flux. Such a harsh condition, in contrast to powder samples synthesized under mild conditions, resulted in the introduction of a large amount of oxygen vacancies ( x = 0.06 in TaO 1- x N) into the crystal, providing a metallic behavior with a large anisotropy of ρ c /ρ ab ∼ 10 3 . Low-temperature oxygen annealing allows for a single-crystal-to-single-crystal transformation to obtain fully oxidized TaON (yellow) crystals. Needle-like crystals can be obtained when NH 4 Cl is used as a flux. Furthermore, black Hf 2 ON 2 single crystals are also grown, suggesting that the high-pressure flux method is widely applicable to other transition-metal oxynitrides, with extensive carrier control.