Experimental Realization of Atomic Monolayer Si 9 C 15 .
Zhao-Yan GaoWenpeng XuYixuan GaoRoger GuzmanHui GuoXueyan WangQi ZhengZhili ZhuYu-Yang ZhangXiao LinQing HuanGeng LiLizhi ZhangWu ZhouHong-Jun GaoPublished in: Advanced materials (Deerfield Beach, Fla.) (2022)
Monolayer Si x C y constitutes an important family of 2D materials that is predicted to feature a honeycomb structure and appreciable bandgaps. However, due to its binary chemical nature and the lack of bulk polymorphs with a layered structure, the fabrication of such materials has so far been challenging. Here, the synthesis of atomic monolayer Si 9 C 15 on Ru (0001) and Rh(111) substrates is reported. A combination of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and density functional theory (DFT) calculations is used to infer that the 2D lattice of Si 9 C 15 is a buckled honeycomb structure. Monolayer Si 9 C 15 shows semiconducting behavior with a bandgap of ≈1.9 eV. Remarkably, the Si 9 C 15 lattice remains intact after exposure to ambient conditions, indicating good air stability. The present work expands the 2D-materials library and provides a promising platform for future studies in nanoelectronics and nanophotonics.
Keyphrases
- electron microscopy
- density functional theory
- room temperature
- high resolution
- molecular dynamics
- high throughput
- air pollution
- machine learning
- magnetic resonance imaging
- particulate matter
- computed tomography
- gold nanoparticles
- magnetic resonance
- molecular dynamics simulations
- deep learning
- molecular docking
- dual energy