Extending growth inhibition during area-selective atomic layer deposition of Al 2 O 3 on aminosilane-functionalized SiO 2 .

During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation eventually occurs as the metal precursor reacts with the surface through secondary pathways. We show that ALD of Al 2 O 3 on functionalized SiO 2 can be significantly delayed by using a lower reactivity, heteroleptic precursor at well below the saturation dose.