Exchange-Biased Quantum Anomalous Hall Effect.

The quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics. Here, we realized the QAH effect in the magnetic topological insulator Cr-doped (Bi,Sb) 2 Te 3 (CBST) grown on an uncompensated antiferromagnetic insulator Al-doped Cr 2 O 3 . Through polarized neutron reflectometry (PNR), we find a strong exchange coupling between CBST and Al-Cr 2 O 3 surface spins fixing interfacial magnetic moments perpendicular to the film plane. The interfacial coupling results in an exchange-biased QAH effect. We further demonstrate that the magnitude and sign of the exchange bias can be effectively controlled using a field training process to set the magnetization of the Al-Cr 2 O 3 layer. Our work demonstrates the use of the exchange bias effect to effectively manipulate the QAH state, opening new possibilities in QAH-based spintronics. This article is protected by copyright. All rights reserved.