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Indium Recovery by Adsorption on MgFe 2 O 4 Adsorbents.

Loredana CiocărlieAdina NegreaMihaela CiopecNarcis DuţeanuPetru NegreaPaula IanasiCatalin IanășiNicoleta Sorina Nemeș
Published in: Materials (Basel, Switzerland) (2022)
Indium and its compounds have many industrial applications and are widely used in the manufacture of liquid crystal displays, semiconductors, low temperature soldering, and infrared photodetectors. Indium does not have its own minerals in the Earth's crust, and most commonly, indium is associated with the ores of zinc, lead, copper and tin. Therefore, it must be recovered as a by-product from other metallurgical processes or from secondary raw materials. The aim of this study is to investigate the adsorption properties for recovering indium from aqueous solutions using iron-magnesium composite (MgFe 2 O 4 ). In addition, the results show that the material offers very efficient desorption in 15% HCl solution, being used for 10 adsorption-desorption cycle test. These results provide a simple and effective process for recovering indium. Present study was focuses on the synthesis and characterization of the material by physico-chemical methods such as: X-ray diffraction, FT-IR spectroscopy, followed by the adsorption tests. The XRD indicates that the MgFe 2 O 4 phase was obtained, and the crystallite size was about 8 nm. New prepared adsorbent materials have a point of zero charge of 9.2. Studies have been performed to determine the influence of pH, initial indium solution concentration, material/solution contact time and temperature on the adsorption capacity of the material. Adsorption mechanism was established by kinetic, thermodynamic and equilibrium studies. At equilibrium a maximum adsorption capacity of 46.4 mg/g has been obtained. From kinetic and thermodynamic studies was proved that the studied adsorption process is homogeneous, spontaneous, endothermic and temperature dependent. Based on Weber and Morris model, we can conclude that the In (III) ions takes place at the MgFe 2 O 4 /In (III) solution-material interface.
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