Intrinsic anomalous Hall effect in thin films of topological kagome ferromagnet Fe 3 Sn 2 .

Fe 3 Sn 2 , a kagome ferromagnet, is a potential quantum material with intriguing topological features. Despite substantial experimental work on the bulk single crystals, the thin film growth of Fe 3 Sn 2 remains relatively unexplored. Here, we investigate the effect of two different seed layers (Ta and Pt) on the growth of Fe 3 Sn 2 thin films. We demonstrate the growth of polycrystalline Fe 3 Sn 2 thin films on Si/SiO 2 substrates by room temperature sputter deposition, followed by in situ annealing at 500 °C. Our structural and magnetic measurements indicate that a pure ferromagnetic phase is formed for the Pt/Fe 3 Sn 2 thin films with higher saturation magnetization of M s = 464 emu cc -1 , while a mixed-phase (consisting of ferromagnetic, Fe 3 Sn 2 and antiferromagnetic, FeSn) is formed for the Ta/Fe 3 Sn 2 thin films with a lower M s of 240 emu cc -1 . The Pt/Fe 3 Sn 2 thin films also exhibit an anomalous Hall coefficient, R s ≈ 2.6 × 10 -10 Ω cm -1 G -1 at room temperature, which is two order of magnitude higher compared to 3d-transition metal ferromagnets. A non-zero temperature-independent anomalous Hall conductivity σ intxy = (23 ± 11) Ω -1 cm -1 indicates an intrinsic mechanism of anomalous Hall effect originating from Berry curvature. These results are important for realizing novel topological spintronic devices on a CMOS-compatible substrate.