Thickness and Ferroelectric Polarization Influence on Film Magnetic Anisotropy across a Multiferroic Material Interface.
Andy Paul ChenWeinan LinJingsheng ChenYuan-Ping FengPublished in: ACS applied materials & interfaces (2020)
The ferroelectric switching effect on perpendicular magnetic anisotropy is examined for the case of the BaTiO3/L10-CoFe interface through first-principles calculations of film magnetocrystalline anisotropy energy (MAE), both with the frozen-potential method and the second-order perturbation theory. The ferroelectric switching-MAE relationship is shown to have opposite trends for BaO- and TiO2-terminated interfaces because of the distinct orbital interaction mechanisms predominant in each termination configuration. The ferroelectric switching effect, changes in Fe-O bond lengths, and termination constitute three different contributors to MAE change, each with a different penetration depth into the CoFe film. The top surface CoFe atoms are shown to feature a high density of minority-spin 3dxz states, which could play a role in influencing the ferroelectric switching-MAE relationship in cases where the top surface undergoes modifications.
Keyphrases
- high density
- room temperature
- optical coherence tomography
- reduced graphene oxide
- density functional theory
- molecularly imprinted
- machine learning
- molecular dynamics
- deep learning
- molecular dynamics simulations
- quantum dots
- gold nanoparticles
- single molecule
- mass spectrometry
- climate change
- neural network
- solid phase extraction