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Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature.

Ji-Hoon ParkAng-Yu LuPin-Chun ShenBong Gyu ShinHaozhe WangNannan MaoRenjing XuSoon Jung JungDonhee HamKlaus KernYimo HanJing Kong
Published in: Small methods (2021)
The large-area synthesis of high-quality MoS 2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS 2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS 2 with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS 2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm 2 V -1 s -1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS 2 growth process via a geometric model of the MoS 2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
Keyphrases
  • room temperature
  • quantum dots
  • ionic liquid
  • transition metal
  • reduced graphene oxide
  • visible light
  • risk assessment
  • wastewater treatment
  • heavy metals
  • gold nanoparticles