Carrier separation in type-II quantum dots inserted in (Zn,Mg)Te/ZnSe nanowires.
Piotr BaranowskiMałgorzata SzymuraAnna KaletaSławomir KretMaciej WójcikRosen GeorgievSergij ChusnutdinowGrzegorz KarczewskiTomasz WojtowiczLech Thomasz BaczewskiPiotr WojnarPublished in: Nanoscale (2023)
Quantum dots consisting of an axial Zn 0.97 Mg 0.03 Te insertion inside a large-bandgap Zn 0.9 Mg 0.1 Te nanowire core are fabricated in a molecular-beam epitaxy system by employing the vapor-liquid-solid growth mechanism. In addition, this structure is coated with a thin ZnSe radial shell that forms a type-II interface with the dot semiconductor. The resulting radial electron-hole separation is evidenced by several distinct effects that occur in the presence of the ZnSe shell, including the optical emission redshift of about 250 meV, a significant decrease in emission intensity, an increase in the excitonic lifetime by one order of magnitude, and an increase in the biexciton binding energy. The type-II nanowire quantum dots where electrons and holes are radially separated constitute a promising platform for potential applications in the field of quantum information technology.
Keyphrases
- quantum dots
- room temperature
- energy transfer
- heavy metals
- sensitive detection
- ionic liquid
- liquid chromatography
- molecular dynamics
- high throughput
- high intensity
- healthcare
- high speed
- risk assessment
- health information
- solar cells
- dna binding
- mass spectrometry
- climate change
- solid state
- reduced graphene oxide
- human health
- social media
- gold nanoparticles
- transcription factor
- high efficiency