Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate.

Two dimensional transition metal dichalcogenides (TMDs as have attracted considerable attention in the field of novel flexible electronics Among the various TMD materials, atomically thin MoS 2 has become the most widely used material due to its advantageous properties such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer scale two layer MoS2 films that was obtained by transferring multiple single layer films grown using chemical vapor depos ition The MoS 2 field effect transistor cell had a top gated device structure with a ( film as the substrate , which exhibited a high on/off ratio (10 8 ), large average mobility 8.56 cm 2 V 1 s 1 ), and exceptional uniformity. Furthermore. These results highlight the immense potential of TMD materials, particularly MoS 2 , in enabling advanced flexible electronic and optoelectronic devices, which paves the way for transformative applications in future generation electronics.