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Metal Sulfide Ion Exchangers: High Acid Stability of Na 2 x Mg 2 y - x Sn 4- y S 8 (NMS) and Topotactic Conversion to 2D Solid Acids with Semiconducting Character.

Michael A QuinteroAnastasia D PournaraRichard GodselZhi LiShobhana PanugantiXiuquan ZhouChristopher M WolvertonMercouri G Kanatzidis
Published in: Inorganic chemistry (2023)
Metal sulfide ion exchange materials (MSIEs) are of interest for nuclear waste remediation applications. We report the high stability of two structurally related metal sulfide ion exchange materials, Na 2 x Mg 2 y - x Sn 4- y S 8 (Mg-NMS) and Na 2 SnS 3 (Na-NMS), in strongly acid media, in addition to the preparation of Na 2 x Ni 2 y - x Sn 4- y S 8 (Ni-NMS). Their formation progress during synthesis is studied with in-situ methods, with the target phases appearing in <15 min, reaction completion in <12 h, and high yields (75-80%). Upon contact with nitric or hydrochloric acid, these materials topotactically exchange Na + for H + , proceeding in a stepwise protonation pathway for Na 5.33 Sn 2.67 S 8 . Na-NMS is stable in 2 M HNO 3 and Mg-NMS is stable in 4 M HNO 3 for up to 4 h, while both NMS materials are stable in 6 M HCl for up to 4 days. However, the treatment of Mg-NMS and Na-NMS with 2-6 M H 2 SO 4 reveals a much slower protonation process since after 4 h of contact both NMS and HMS are present in the solution. The resultant protonated materials, H 2 x Mg 2 y - x Sn 4- y S 8 and H 4 x [(H y Na y -1 ) 1.33 x Sn 4--1.33 x ]S 8 , are themselves solid acids and readily react with and intercalate a variety of organic amines, where the band gap of the resultant adduct is influenced by amine choice and can be tuned within the range of 1.88(5)-2.27(5) eV. The work function energy values for all materials were extracted from photoemission yield spectroscopy in air (PYSA) measurements and range from 5.47 (2) to 5.76 (2) eV, and the relative band alignments of the materials are discussed. DFT calculations suggest that the electronic structure of Na 2 MgSn 3 S 8 and H 2 MgSn 3 S 8 makes them indirect gap semiconductors with multi-valley band edges, with carriers confined to the [MgSn 3 S 8 ] 2- layers. Light electron effective masses indicate high electron mobilities.
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