High-performance solution-processed 2D p-type WSe 2 transistors and circuits through molecular doping.

Semiconducting ink based on two-dimensional (2D) single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, we report a versatile strategy of doping with Br 2 to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br 2 -doped WSe 2 transistors showed a field-effect hole mobility of more than 27 cm 2 V -1 s -1 , and a high on/off current ratio of ∼10 7 , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe 2 and n-type MoS 2 layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (V DD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry. This article is protected by copyright. All rights reserved.