MOF-Derived In 2 O 3 Microrods for High-Performance Photoelectrochemical Ultraviolet Photodetectors.

Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In 2 O 3 )-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In 2 O 3 -based PEC UV PDs for the first time. In 2 O 3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In 2 O 3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 10 10 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In 2 O 3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In 2 O 3 holds great promise in high-performance PEC UV PDs.