High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In 2 O 3 channel layers.

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed high performance GQD-decorated In 2 O 3 thin-film transistors (TFTs) based on ZrO 2 as gate dielectrics. GQDs-In 2 O 3 /ZrO 2 TFTs with optimized doping content have demonstrated high electrical performance and low operating voltage, including a larger field-effect mobility ( μ FE ) of 34.02 cm 2 V -1 s -1 , a higher I on / I off of 4.55 × 10 7 , a smaller subthreshold swing (SS) of 0.08 V dec -1 , a lower interfacial trap states ( D it ) of 5.84 × 10 11 cm -2 and threshold voltage shift of 0.07 V and 0.12 V under positive bias stress (PBS) and negative bias stress (NBS) for 3600 s, respectively. As a demonstration of complex logic applications, a resistor-loaded unipolar inverter based on GQDs-In 2 O 3 /ZrO 2 has been built, demonstrating full swing characteristic and high gain of 10.63. Low-frequency noise (LFN) characteristics of GQDs-In 2 O 3 /ZrO 2 TFTs have been presented and it was concluded that the noise source can be attributed to the fluctuations in mobility. As a result, it can be concluded that solution-derived GDQ-optimized oxide-based TFTs will manifest potential applications in electronic devices.