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Two-dimensional devices and integration towards the silicon lines.

Shuiyuan WangXiaoxian LiuMingsheng XuLiwei LiuDeren YangPeng Zhou
Published in: Nature materials (2022)
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
Keyphrases
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