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Study on interface engineering and chemical bonding of the ReS 2 @ZnO heterointerface for efficient charge transfer and nonlinear optical conversion efficiency.

Xin-Yu ZhengHong-Yu LiBing-Yin ShiHong-Xu CaoYu LiuHai-Tao Yin
Published in: Physical chemistry chemical physics : PCCP (2024)
Rhenium sulfide (ReS 2 ) has emerged as a promising two-dimensional material, demonstrating broad-spectrum visible absorption properties that make it highly relevant for diverse optoelectronic applications. Manipulating and optimizing the pathway of photogenerated carriers play a pivotal role in enhancing the efficiency of charge separation and transfer in novel semiconductor composites. This study focuses on the strategic construction of a semiconductor heterostructure by synthesizing ZnO on vacancy-containing ReS 2 (V Re -ReS 2 ) through chemical bonding processes. The ingeniously engineered built-in electric field within the heterostructure effectively suppresses the recombination of photogenerated electron-hole pairs. A direct and well-established interfacial connection between V Re -ReS 2 and ZnO is achieved through a robust Zn-S bond. This distinctive bond configuration leads to enhanced nonlinear optical conversion efficiency, attributed to shortened carrier migration distances and accelerated charge transfer rates. Furthermore, theoretical calculations unveil the superior chemical interactions between Re vacancies and sulfide moieties, facilitating the formation of Zn-S bonds. The photoluminescence (PL) intensity is increased by the formation of V Re -ReS 2 and ZnO heterostructure and the PL quantum yield of V Re -ReS 2 is improved. The intricate impact of the Zn-S bond on the nonlinear absorption behavior of the V Re -ReS 2 @ZnO heterostructure is systematically investigated using femtosecond Z-scan techniques. The charge transfer from ZnO to ReS 2 defect levels induces a transition from saturable absorption to reverse saturable absorption in the V Re -ReS 2 @ZnO heterostructure. Transient absorption measurements further confirm the presence of the Zn-S bond between the interfaces, as evidenced by the prolonged relaxation time ( τ 3 ) in the V Re -ReS 2 @ZnO heterostructure. This study offers valuable insights into the rational construction of heterojunctions through tailored interfacial bonding and surface/interface charge transfer pathways. These endeavors facilitate the modulation of electron transfer dynamics, ultimately yielding superior nonlinear optical conversion efficiency and effective charge regulation in optoelectronic functional materials.
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