The onset of tapering in the early stage of growth of a nanowire.

The early stage of growth of semiconductor nanowires is studied in the case where the sidewall adatoms have a short diffusion length due to a strong desorption. Experimental results are described for the growth of ZnSe nanowires by molecular beam epitaxy. They are discussed and interpreted using the Burton-Cabrera-Frank description of the propagation of steps along the sidewalls, and compared to other II-VI and III-V nanowires. The role of the growth parameters and the resulting shape of the nanowires (cylinder, cone, or both combined) are highlighted.