Two-dimensional MoSi 2 As 4 -based field-effect transistors integrating switching and gas-sensing functions.

Multifunctional nanoscale devices integrating multiple functions are of great importance for meeting the requirements of next-generation electronics. Herein, using first-principles calculations, we propose multifunctional devices based on the two-dimensional monolayer MoSi 2 As 4 , where a single-gate field-effect transistor (FET) and FET-type gas sensor are integrated. After introducing the optimizing strategies, such as underlap structures and dielectrics with a high dielectric constant ( κ ), we designed a 5 nm gate-length MoSi 2 As 4 FET, whose performance fulfilled the key criteria of the International Technology Roadmap for Semiconductors (ITRS) for high-performance semiconductors. Under the joint adjustment of the underlap structure and high- κ dielectric material, the on/off ratio of the 5 nm gate-length FET reached up to 1.38 × 10 4 . In addition, driven by the high-performance FET, the MoSi 2 As 4 -based FET-type gas sensor showed a sensitivity of 38% for NH 3 and 46% for NO 2. Moreover, the weak interaction between NH 3 (NO 2 ) and MoSi 2 As 4 favored the recycling of the sensor. Furthermore, the sensitivity of the sensor could be effectively improved by the gate voltage, and was increased up to 67% (74%) for NH 3 (NO 2 ). Our work provides theoretical guidance for the fabrication of multifunctional devices combining a high-performance FET and sensitive gas sensor.