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Facilitating the Hydrogen Evolution Reaction on Basal-Plane S Sites on MoS 2 @Ni 3 S 2 by Dual Ti and N Plasma Treatment.

Ning PangYun LiChang WangXin TongMengqiu WangHuiyun ShiDajun WuDayuan XiongShaohui XuPavel B SorokinLianwei WangLin JiangPaul K Chu
Published in: ACS applied materials & interfaces (2024)
Atomic engineering of the basal plane active sites in MoS 2 holds great promise to boost the electrocatalytic activity for hydrogen evolution reactions (HER), yet the performance optimization and mechanism exploration are still not satisfactory. Herein, we proposed a dual-plasma engineering strategy to implant Ti and N heteroatoms into the basal plane of MoS 2 supported by Ni 3 S 2 nanorods on nickel foam (MSNF) for efficient electrocatalysis of HER. Owing to the low formation energy of Ti dopants in MoS 2 and the extra charge carriers introduced by N dopants, the optimally codoped samples N1.0@Ti500-MSNF demonstrate significant morphology changes from nanorods to urchin-like nanospheres with the surface active areas increased by seven-fold, as well as enhanced electrical conductivity in comparison with the nondoped counterparts. The HER performance of N1.0@Ti500-MSNF is comparable with the Pt-based catalyst: overpotential of 26 mV at 20 mA cm -2 , Tafel slope of 35.6 mV dec -1 , and long-term stability over 50 h. First-principles calculation reveals that N doping accelerates the dissociation of water molecules while Ti doping activates the adjacent S sites for hydrogen adsorption by lowering the Gibbs free energy, resulting in excellent HER activity. This work thus provides an effective strategy for basal plane engineering of MoS 2 heterostructures toward high-performance HER and sustainable energy supply at reasonable costs.
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