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Asymmetric magnetic proximity interactions in MoSe 2 /CrBr 3 van der Waals heterostructures.

Junho ChoiChristopher LaneJian-Xin ZhuScott A Crooker
Published in: Nature materials (2022)
Magnetic proximity interactions between atomically thin semiconductors and two-dimensional magnets provide a means to manipulate spin and valley degrees of freedom in non-magnetic monolayers, without using applied magnetic fields 1-3 . In such van der Waals heterostructures, magnetic proximity interactions originate in the nanometre-scale coupling between spin-dependent electronic wavefunctions in the two materials, and typically their overall effect is regarded as an effective magnetic field acting on the semiconductor monolayer 4-8 . Here we demonstrate that magnetic proximity interactions in van der Waals heterostructures can in fact be markedly asymmetric. Valley-resolved reflection spectroscopy of MoSe 2 /CrBr 3 van der Waals structures reveals strikingly different energy shifts in the K and K' valleys of the MoSe 2 due to ferromagnetism in the CrBr 3 layer. Density functional calculations indicate that valley-asymmetric magnetic proximity interactions depend sensitively on the spin-dependent hybridization of overlapping bands and as such are likely a general feature of hybrid van der Waals structures. These studies suggest routes to control specific spin and valley states in monolayer semiconductors 9,10 .
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