A layered Ge2Sb2Te5 phase change material.

Bo ZhangVeronika CicmancovaJaroslav KupcikStanislav Šlang Jhonatan Rodriguez PereiraRoman SvobodaPetr KutalekTomas Wagner

Published in: Nanoscale (2020)

In this study, a universal Ge2Sb2Te5 phase change material was sputtered to obtain a layered structure. The crystalline phase of this material was prepared by annealing. SEM (scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy) images give confirmed that the sputtered Ge2Sb2Te5 thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. The thicknesses of acetone-exfoliated crystalline and amorphous flakes are approx. 10-60 nm.

Keyphrases

electron microscopy
high resolution
room temperature
deep learning
highly efficient
photodynamic therapy
transition metal
solid state