Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction.

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak (from 385 nm to 365 nm) compared with the undoped heterojunction (n-ZnO/p-BDD). The prepared heterojunction devices demonstrate good thermal stability and excellent rectification characteristics at different temperatures. As the temperature increases, the turn-on voltage and ideal factor ( n ) of the device gradually decrease. The electronic transport behaviors depending on temperature of the heterojunction at different bias voltages are discussed using an equilibrium band diagram and semiconductor theoretical model.