Interplay Between Cr Dopants and Vacancy Clustering in the Structural and Optical Properties of WSe2.
Ching-Hwa HoWei-Hao ChenKwong K TiongKuei-Yi LeeAlexandre GloterAlberto ZobelliOdile StephanLuiz Henrique Galvão TizeiPublished in: ACS nano (2017)
Here, we analyze the effect of Cr doping on WSe2 crystals. The topology and the chemistry of the doped samples have been investigated by atom-resolved scanning transmission electron microscopy combined with electron energy loss spectroscopy. Cr (measured to have formal valence 3+) occupies W sites (formal valence 4+), indicating a possible hole doping. However, single or double Se vacancies cluster near Cr atoms, leading to an effective electron doping. These defects organization can be explained by the strong binding energy of the CrW-Vse complex obtained by density functional theory calculations. In highly Cr-doped samples, a local phase transition from the 2H to the to 1T phase is observed, which has been previously reported for other electron-doped transition-metal dichalcogenides. Cr-doped crystals suffer a compressive strain, resulting in an isotropic lattice contraction and an anisotropic optical bandgap energy shift (25 meV in-plane and 80 meV out-of-plane).
Keyphrases
- electron microscopy
- transition metal
- density functional theory
- quantum dots
- molecular dynamics
- high resolution
- highly efficient
- metal organic framework
- visible light
- solar cells
- room temperature
- mass spectrometry
- electron transfer
- dna binding
- single molecule
- single cell
- rna seq
- atomic force microscopy
- finite element
- drug discovery