Raman Spectroscopy-Assisted Characterization of Nanoform MoS 2 Thin Film Transistor.
Rajasekaran SaminathanHaitham HadidiMohammed TharwanAli AlnujaieJabril A KhamajGunasekaran VenugopalPublished in: Scanning (2022)
In this paper, we report the simple preparation and investigation of electrical transport properties of nanoform MoS 2 thin film transistor (TFT) devices. MoS 2 nanoparticles were synthesized by using the hydrothermal method. The physiochemical characterizations such as UV-vis, Fourier transform infrared, X-ray diffraction, and Raman spectroscopy studies were performed. Spin-coating was used to make the thin film on which silver electrodes were made. We observed nonlinear current-voltage (I-V) characteristics; however, the symmetricity was found in the I-V curve which confirms the no formation of the Schottky barrier between thin film and electrodes. Transistor transfer characteristics reveal that the TFT device is n-doped as more drain current modulation is observed when the positive gate voltage is applied. The relationship between gate-current and gate voltage studies concludes that there is no leakage gate current in the TFT device which further confirms the good reliability of transfer characteristics of a device. The device mobility was calculated as ~10.2 cm 2 /Vs, and the same was explained with plausible reason supported with Raman spectra analysis.
Keyphrases
- raman spectroscopy
- quantum dots
- reduced graphene oxide
- room temperature
- highly efficient
- gold nanoparticles
- transition metal
- visible light
- density functional theory
- dna methylation
- risk assessment
- gene expression
- genome wide
- molecular dynamics
- single cell
- molecularly imprinted
- carbon nanotubes
- silver nanoparticles
- oxide nanoparticles