Tunable Ag Nanocavity Enhanced Green Electroluminescence from SiN x :O Light-Emitting Diode.

As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiN x :O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiN x O device, the green electroluminescence (EL) from the SiN x :O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiN x :O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiN x :O films play a key role in the strong green EL. Our discovery demonstrates that SiN x :O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.