Resurfacing of InAs Colloidal Quantum Dots Equalizes Photodetector Performance across Synthetic Routes.

The synthesis of highly monodispersed InAs colloidal quantum dots (CQDs) is needed in InAs CQD-based optoelectronic devices. Because of the complexities of working with arsenic precursors such as tris-trimethylsilyl arsine ((TMSi) 3 As) and tris-trimethylgermyl arsine ((TMGe) 3 As), several attempts have been made to identify new candidates for synthesis; yet, to date, only the aforementioned two highly reactive precursors have led to excellent photodetector device performance. We begin the present study by investigating the mechanism, finding that the use of the cosurfactant dioctylamine plays a crucial role in producing monodispersed InAs populations. Through quantitative analysis of ligands on the surface of InAs CQDs, we find that (TMGe) 3 As leads to In-rich characteristics, and we document the presence of an amorphous In-oleate shell on the surface. This we find causes surface defects, and thus, we develop materials processing strategies to remove the surface shell with a view to achieving efficient charge transfer in CQD solids. As a result, we develop resurfacing protocols, tailored to each dot synthesis, that produce balanced In-to-As stoichiometry regardless of synthetic input, enabling us to fabricate NIR photodetectors that achieve best-in-class EQEs at 940 nm excitons (25-28%, biased), independent of the synthetic pathway.