Improving the Performance of Red Organic Light-Emitting Transistors by Utilizing a High- k Organic/Inorganic Bilayer Dielectric.

Integration of electrical switching and light emission in a single unit makes organic light-emitting transistors (OLETs) highly promising multifunctional devices for next-generation active-matrix flat-panel displays and related applications. Here, high-performance red OLETs are fabricated in a multilayer configuration that incorporates a zirconia (ZrO x )/cross-linked poly(vinyl alcohol) (C-PVA) bilayer as a dielectric. The developed organic/inorganic bilayer dielectric renders high dielectric constant as well as improved dielectric/semiconductor interface quality, contributing to enhanced carrier mobility and high current density. In addition, an efficient red phosphorescent organic emitter doped in a bihost system is employed as the emitting layer for an effective exciton formation and light generation. Consequently, our optimized red OLETs displayed a high brightness of 16 470 cd m -2 and a peak external quantum efficiency of 11.9% under a low gate and source-drain voltage of -24 V. To further boost the device performance, an electron-blocking layer is introduced for ameliorated charge-carrier balance and hence suppressed exciton-charge quenching, which resulted in an improved maximum brightness of 20 030 cd m -2 . We anticipate that the new device optimization approaches proposed in this work would spur further development of efficient OLETs with high brightness and curtailed efficiency roll-off.