Large-area growth of SnS 2 nanosheets by chemical vapor deposition for high-performance photodetectors.

Two-dimensional tin disulfide (SnS 2 ) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS 2 nanosheets and unsatisfactory performance of the photodetectors based on SnS 2 have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl 2 as a precursor to grow SnS 2 nanosheets. We found that the as-grown SnS 2 nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS 2 were fabricated and, exhibited a high responsivity (1400 A W -1 ), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 10 5 %), and remarkable detectivity ( D *) (3.1 × 10 13 Jones). Our work provides a new CVD method to grow high-quality SnS 2 nanosheets.