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Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet.

Han WuLei ChenPaul MalinowskiBo Gyu JangQinwen DengKirsty ScottJianwei HuangJacob P C RuffYu HeXiang ChenChaowei HuZiqin YueJi Seop OhXiaokun TengYucheng GuoMason KlemmChuqiao ShiYue ShiChandan SettyTyler WernerMakoto HashimotoDong-Hui LuTurgut YilmazElio VescovoSung-Kwan MoAlexei V FedorovJonathan D DenlingerYaofeng XieBin GaoJunichiro KonoPengcheng DaiYimo HanXiaodong XuRobert J BirgeneauJian-Xin ZhuEduardo H da Silva NetoLiang WuJiun-Haw ChuQimiao SiMing Yi
Published in: Nature communications (2024)
Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe 5-δ GeTe 2 . We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.
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