High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
Jessica L BolandFrancesca AmaduzziSabrina SterzlHeidi PottsLaura M HerzAnna Fontcuberta I MorralMichael B JohnstonPublished in: Nano letters (2018)
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V-1 s-1 at 10 K.
Keyphrases
- raman spectroscopy
- room temperature
- high speed
- reduced graphene oxide
- solar cells
- induced apoptosis
- atomic force microscopy
- electron transfer
- small molecule
- gold nanoparticles
- oxidative stress
- cell cycle arrest
- single molecule
- high resolution
- endoplasmic reticulum stress
- ionic liquid
- anti inflammatory
- living cells
- cell proliferation