Room temperature giant magnetoresistance in half-metallic Cr 2 C based two-dimensional tunnel junctions.

Two-dimensional (2D) magnetic materials inherit enormous potential to revolutionize next-generation spintronic technology. The majority of prior investigations using 2D ferromagnet-based tunnel junctions have shown encouraging tunnel magnetoresistance (TMR) at low temperatures. Using first-principles-based calculations, here we investigate the magnetic properties of commercially available Cr 2 C crystals at their monolayer limit and reveal their half metallicity properties far beyond room temperature. We then design hetero-multilayer structures combining Cr 2 C with graphene and hexagonal boron nitride (h-BN) and report their magnetoresistance using spin-polarized quantum transport calculations. While graphene based devices, adsorbed on the metal contact, reveal a very high TMR (1200%), it can be further increased to 1500% by changing the barrier layer to h-BN. The dependence of TMR on the number of barrier layers and different metallic electrode materials (Ti, Ag, and Au) are also studied. Our investigation suggests that Cr 2 C based spin valves can serve as the perfect building blocks for room temperature all-2D spintronic devices.