Achieving Ohmic contacts with low resistance is quite desirable for two-dimensional (2D) Schottky barrier field effect transistors (SBFETs). We verify the electrode effect on monolayer (ML) SnS 2 SBFETs using ab initio calculations. With the aforeselected ML electrodes from matching lattices and work functions, we obtain n-type Ohmic contacts or quasi-Ohmic contacts to ML SnS 2 with ML 1T-NbTe 2 , Sc 2 NF 2 , Mo 2 NF 2 , Nb 2 CF 2 , and graphene electrodes. The n-type ML SnS 2 SBFET with the Ohmic-contact 1T-NbTe 2 electrode exhibits remarkably better device performance than that with a Schottky-contact 2H-NbTe 2 electrode, and their on-state currents of 629/1048 μA μm -1 , delay times of 0.236/0.169 ps, and power dissipations of 0.074/0.089 fJ μm -1 exceed the International Roadmap for Devices and Systems targets for low-power/high-performance application. This study reports on Ohmic-contact electrodes for n-type ML SnS 2 SBFETs and can give hints for future theoretical and experimental studies on 2D SBFETs.