Study of the Long-Term High-Temperature Structural Stability of RuAl Electrodes for Microelectronic Devices.

The high-temperature stability of RuAl-based electrodes for application in microelectronic devices is analyzed for long-term duration. The electrodes are prepared on Ca 3 TaGa 3 Si 2 O 14 (CTGS) substrates using SiO 2 and Al-N-O cover and barrier layers as oxidation protection. The samples are annealed at 600, 700, or 800 °C in air for 192 h. Minor degradation is observed after thermal loading at 700 °C. The annealing at 800 °C for 192 h leads to a partial oxidation of the Al in the extended contact pad and to a complete oxidation of the Al within the structured interconnect electrodes. The different degradation of the interconnect electrodes and the contact pads is caused by their different lateral dimensions. In summary, long-term high-temperature stability is demonstrated up to at least 700 °C in air. Less oxidizing atmospheres should allow the application at higher temperatures and for a significantly longer duration.