Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?

Shujuan MaoGui-Lei WangChao Zhao

Published in: National science review (2023)

Whether amorphous oxide semiconductor (AOS) is an enabler or pass-by for monolithic 3D DRAM is discussed, with current challenges and future directions proposed in this perspective.

Keyphrases

room temperature
ionic liquid
liquid chromatography
molecularly imprinted
solid phase extraction
current status
solid state
simultaneous determination