Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes.

Philipp WendelDominik DietzJonas Deuermeier Andreas Klein

Published in: Materials (Basel, Switzerland) (2021)

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

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