High responsivity photodetector based on MEH-PPV/CsPbBr 3 heterojunction.

Perovskite quantum dots (QDs) and organic materials have great research potential in the field of optoelectronic devices. In this paper, MEH-PPV/CsPbBr 3 heterojunction photodetectors (PDs) are prepared by spin coating method based on the good photoelectric properties of CsPbBr 3 perovskite QDs and MEH-PPV. The MEH-PPV/CsPbBr 3 heterojunction improves the energy level arrangement, and CsPbBr 3 QDs can passivate the surface defects of MEH-PPV films to achieve effective charge separation and transfer, thus inhibiting the dark current and improving the photoelectric performance of the device. Under 532 nm laser irradiation, the responsivity ( R ) of MEH-PPV/CsPbBr 3 heterojunction PD is 11.98 A W -1 , the specific detectivity ( D *) is 6.98 × 10 11 Jones, and the response time is 15/16 ms. This work provides experience for the study of perovskite QDs and organic materials heterojunction optoelectronic devices.