Versatile Solution-Processed Reductive Interface Layer for Contact Engineering of Staggered Organic Field-Effect Transistors.

Efficient charge injection/extraction from/to contact electrodes is essential to realize organic electronic and optoelectronic devices with optimum characteristics for many applications. Herein, we studied a versatile reductive interlayer based on sodium borohydride (NaBH 4 ) to control the contact properties of the staggered organic field-effect transistors (OFETs) either by doping and/or by regulating the contribution of charge carriers. The versatile functionalities of the NaBH 4 layer are mainly determined by the alignment of frontier molecular orbitals of donor-acceptor (D-A) type copolymer semiconductors and the work function of the contact electrode. After incorporating the NaBH 4 layer, the work function of the bottom-contact gold electrode can be decreased significantly by 1.0 eV, which makes it favorable to efficient electron injection. An Ohmic contact is achieved by the spontaneous injection of electrons to the n-type organic semiconductors with high electron affinity while converting the OFET operation mode to n-type characteristics by blocking the counter-charge carriers for the other types of ambipolar and p-type semiconductors. The solution-processed reducing agent can be a valuable approach to develop high-performance printed and flexible electronic devices through careful engineering to obtain proper contributions of charge carriers either as electrons or holes in various D-A copolymer semiconductors.