Principles for 2D Material Assisted Nitrides Epitaxial Growth.

Beyond traditional heteroepitaxy, 2D-materials-assisted epitaxy opens opportunities to revolutionize future material integration methods. However, basic principles in 2D-material-assisted nitrides epitaxy remain unclear, which impedes understanding the essence, thus hindering the progress of it. Here, we theoretically establish the crystallographic information of nitrides/2D material interface, which is further confirmed experimentally. We find the atomic interaction at the nitrides/2D material interface is related to the nature of underlying substrates. For single-crystalline substrates, the heterointerface behaves like a covalent one and the epilayer inherits the substrate's lattice. While for amorphous substrates, the heterointerface tends to be a van der Waals (vdW) one and strongly relies on the properties of 2D materials. Therefore, modulated by graphene, the nitrides epilayer is polycrystalline. In contrast, single-crystalline GaN films are successfully achieved on WS 2 . These results provide suitable growth front construction strategy for high-quality 2D-material-assisted nitrides epitaxy. It also opens a pathway toward various semiconductors hetero-integration. This article is protected by copyright. All rights reserved.