Significant Increase in Band Gap and Emission Efficiency of In2O3 Quantum Dots by Size-Tuning around 1 nm in Supermicroporous Silicas.

The size of In2O3 quantum dots (QDs) is tuned from 0.57 to 1.80 nm by using supermicroporous silicas (SMPSs) as a template. The band gap energy and photoluminescence quantum yields of In2O3-QDs increase remarkably when their size is decreased below 1 nm.