Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy.
Marcel S ClaroIdo LevyAbhinandan GangopadhyayDavid J SmithMaria C TamargoPublished in: Scientific reports (2019)
We report the growth of self-assembled Bi2Se3 quantum dots (QDs) by molecular beam epitaxy on GaAs substrates using the droplet epitaxy technique. The QD formation occurs after anneal of Bismuth droplets under Selenium flux. Characterization by atomic force microscopy, scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray reflectance spectroscopy is presented. Raman spectra confirm the QD quality. The quantum dots are crystalline, with hexagonal shape, and have average dimensions of 12-nm height (12 quintuple layers) and 46-nm width, and a density of 8.5 × 109 cm-2. This droplet growth technique provides a means to produce topological insulator QDs in a reproducible and controllable way, providing convenient access to a promising quantum material with singular spin properties.
Keyphrases
- electron microscopy
- quantum dots
- single molecule
- atomic force microscopy
- high resolution
- sensitive detection
- energy transfer
- high speed
- photodynamic therapy
- high throughput
- single cell
- density functional theory
- room temperature
- body mass index
- molecular dynamics
- magnetic resonance imaging
- visible light
- raman spectroscopy
- ionic liquid
- light emitting