"Clean" doping to advance 2D material phototransistors.

Zhen WangPeng WangWei-Da Hu

Published in: Light, science & applications (2022)

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal "clean" doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication.

Keyphrases

transition metal
low cost
genome wide
single cell
gene expression
dna methylation