Chemical Analysis of the Gallium Surface in a Physiologic Buffer.

Gallium and its alloys have been regarded as one of the promising materials for flexible bioelectronics due to their liquid-like mechanical properties, excellent electrical property, and low toxicity. Although many studies have fabricated bioelectronics from gallium-based liquid metals, gallium surface chemistry in physiologic conditions is rarely investigated. Here, we investigated the chemical change of the gallium surface in a physiologic buffer at 37 °C over 45 days. The gallium ion concentration and pH measurement indicated that the oxidation and corrosion progressed more rapidly in the physiological buffer than in air. Also, the release of gallium ions and protons followed a square root of time growth. Various spectroscopic techniques were used to measure the chemical composition change on the gallium surface. The FT-IR study indicated that the GaOOH-rich gallium surface produced Ga 3+ and OH - ions. The XPS study indicated the oxide layer formation within 5 days, and then the contamination layer was deposited over time, which includes different ions and organic materials derived from the physiologic buffer. This study provides a detailed chemical analysis of the gallium surface in a physiological buffer. These fundamental studies would be a cornerstone for understanding the complex interaction between the gallium surface and the biological environment.