Growth of In x Ga1-x Sb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments.

Yuko InatomiK SakataM ArivanandhanG RajeshV Nirmal KumarT KoyamaY MomoseT OzawaY OkanoY Hayakawa

Published in: NPJ microgravity (2015)

Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga1-x Sb alloy semiconductor.

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