Login / Signup

Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta 2 NiS 5 /CrOCl van der Waals Heterostructure.

Yue SuPeng ChenXiangrui XuYufeng ZhangWeiwei CaiGang PengXue-Ao ZhangChuyun Deng
Published in: Nanomaterials (Basel, Switzerland) (2023)
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta 2 NiS 5 and CrOCl, which exhibited remarkably enhanced in-plane anisotropy via polarized Raman spectroscopy and electrical transport measurements. Compared with pristine Ta 2 NiS 5 , the anisotropy ratio of the Raman intensities for the B 2g , 2 A g , and 3 A g modes increased in the heterostructure. More importantly, the anisotropy ratios of conductivity and mobility in the heterostructure increased by one order of magnitude. Specifically speaking, the conductivity ratio changed from ~2.1 (Ta 2 NiS 5 ) to ~15 (Ta 2 NiS 5 /CrOCl), while the mobility ratio changed from ~2.7 (Ta 2 NiS 5 ) to ~32 (Ta 2 NiS 5 /CrOCl). Such prominent enhancement may be attributed to the symmetry reduction caused by lattice mismatch at the heterostructure interface and the introduction of strain into the Ta 2 NiS 5 . Our research provides a new perspective for enhancing artificial anisotropy physics and offers feasible guidance for future functionalized electronic devices.
Keyphrases
  • raman spectroscopy
  • quantum dots
  • gold nanoparticles
  • molecularly imprinted