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Paper based flexible MoS2-CNT hybrid memristors.

B Raju NaikNitika AryaViswanath Balakrishnan
Published in: Nanotechnology (2024)
We report MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNTs in MoS2 to improve the MoS2 conductivity and investigate the memristor device characteristics. The device with 10% CNT shows low VSET voltage of 2.5 V, which is comparably small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ~105 sec and 102 cycles, making them a potential candidate in flexible painted electronics. Along with good electrical performance, it also shows high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated with percolation theory and defect-induced filament formation. Further, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the issue of environmental pollution caused by electronic waste in the near future.&#xD.
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