Rational synthesis of a pyridyl-imidazoquinazoline based multifunctional 3D Zn(II)-MOF: structure, luminescence, selective and sensitive detection of Al 3+ and TNP, and its semiconducting device application.

In the age of sustainable development, the exploration of multifunctional materials is of high priority due to their economic benefits and environmental suitability. A stable luminescent coordination polymer, [Zn 2 (tdc) 4 (pdiq) 3 ] (1), (pdiq = pyridyl-imidazoquinazoline; H 2 tdc = 2,5-thiophenedicarboxylic acid) has been prepared and structurally confirmed by single-crystal X-ray diffraction analysis. The 3D framework consists of a distorted octahedral geometry with a ZnO 4 N 2 coordination sphere where four carboxylato-O donations come from two tdc 2- as bridging ligands and two pyridyl-Ns come from two pdiq. The π⋯π interactions between the imidazolium and phenyl groups bestow robustness on the architecture. The compound is chemically stable to water, shows tolerance to acid/base aqueous solutions (pH = 2-12), and is stable to the impact of organic solvents. The high dispersibility of Zn-MOF (1) in acetonitrile may enhance the fluorescence intensity compared to that in water, which prompted fluorescence measurements in the former solvent and it is used for the efficient and selective turn-off ratiometric sensing of Al 3+ ions (LOD, 1.39 × 10 -7 M). In addition, the fluorescence emission of 1 is instantly quenched by trinitrophenol (TNP) and the LOD is 1.54 × 10 -7 M. The Tauc's plot is used to measure the semiconducting band gap (3.33 eV) and the electrical conductivity is significantly increased upon illumination ( Λ : 1.14 × 10 -3 S m -1 (dark), 5.35 × 10 -3 S m -1 (light)) and the energy barrier declines marginally (FB: 0.57 (dark), 0.49 (light)). Transit time ( τ ) and diffusion length ( L D ) at the quasi-Fermi level were analyzed to offer information on the charge transport mechanism of the compound. The better performance on photo-irradiation signifies the enhanced charge transfer kinetics of a Zn-MOF coated thin-film device (TFD 1), which encourages its application in semiconductor devices.