Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature.

Resistance switching was obtained in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature by applying an external electric field. The modulation of the resistance is more pronounced in the thinner samples, indicating that it is an interfacial effect. In addition, the resistance of Al:ZnO films is significantly reduced by the photoexcited carriers when illumination is applied. The results indicate that the carrier density in the Al:ZnO films is modulated under external electric fields, due to the accumulation and depletion of charge at the interface between Al:ZnO and Pb(Mg1/3Nb2/3)0.7Ti0.3O3. Hence, reversible and nonvolatile resistance states can be achieved by the ferroelectric field effect, and it is expected that multilevel storage will be realized.