Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices.
Hieu Pham Trung NguyenPublished in: Light, science & applications (2022)
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.