Solution-processable and photopolymerisable TiO 2 nanorods as dielectric layers for thin film transistors.

We report the fabrication of a solution-processed n-type Thin Film Transistor (TFT) with current on/off ratios of 10 4 , a turn-on voltage ( V ON ) of 1.2 V and a threshold voltage ( V T ) of 6.2 V. The TFT incorporates an insoluble and intractable dielectric layer ( k = 7-9) prepared in situ from solution-processed and then photopolymerised ligand-stabilised, inorganic/organic TiO 2 nanorods. A solution processed zinc oxide (ZnO) layer acts as the semiconductor. The new surface-modified TiO 2 nanorods were synthesised using a ligand replacement process with a monolayer coating of photopolymerisable 10-undecynylphosphonic acid (10UCYPA) to render them both soluble in common organic solvents and be photopolymerisable using UV-illumination after having been deposited on substrate surfaces from solution and drying.